TXRF-V300 in-process VPD / TXRF contamination metrology tool
Wet chemical techniques have been accepted by the semiconductor industry
as one of the preferred approaches for the analysis of metal ion
contamination on a silicon surface. In these techniques, trace metal ions on
a silicon surface are collected and concentrated by a pretreatment step, vapor
phase decomposition (VPD), and then analyzed by a sensitive
spectroscopic technique. For in-process wafer contamination monitoring, Total
reflection X-ray fluorescence (TXRF) has long been the spectroscopic
tool of choice.
With the introduction of the Rigaku TXRF-V300, these two techniques have
been fully integrated to afford the world's first VPD-TXRF hybrid metrology
tool—offering the two orders of magnitude better detection limits than
previously possible with conventional in-process TXRF tools.
Features
- 107 atoms/cm2 detection limits - in a stand alone system
- Bridge tool - 150 mm, 200 mm, and 300 mm compatibility
- X-Y-θ wafer stage - for enhanced accuracy
- Multitasking - simultaneous VPD & TXRF operation for highest throughput
- Class 100 or less